feb.1999 FS10VSJ-2 outline drawing dimensions in mm to-220s mitsubishi nch power mosfet FS10VSJ-2 high-speed switching use application motor control, lamp control, solenoid control dc-dc converter, etc. v v a a a a a w c c g 100 20 10 40 10 10 40 30 C55 ~ +150 C55 ~ +150 1.2 v gs = 0v v ds = 0v l = 100 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 10.5max. 1.3 1.5max. qwe r 4.5 0 +0.3 ? 3.0 +0.3 ?.5 1 5 0.8 8.6 0.3 9.8 0.5 1.5max. (1.5) 0.5 4.5 2.6 0.4 b q gate w drain e source r drain wr q e 4v drive v dss ............................................................................... 100v r ds (on) (max) ............................................................. 0.19 w i d ........................................................................................ 10a integrated fast recovery diode (typ.) ............ 95ns
feb.1999 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) t rr mitsubishi nch power mosfet FS10VSJ-2 high-speed switching use v m a ma v w w v s pf pf pf ns ns ns ns v c/w ns 100 1.0 1.5 0.14 0.16 0.70 13 800 125 45 14 15 65 40 1.0 95 0.1 0.1 2.0 0.19 0.21 0.95 1.5 4.17 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 100v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 5a, v gs = 4v i d = 5a, v gs = 10v i d = 5a, v ds = 5v v ds = 10v, v gs = 0v, f = 1mhz v dd = 50v, i d = 5a, v gs = 10v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case i s = 10a, dis/dt = C100a/ m s performance curves 0 10 20 30 40 50 0 200 50 100 150 0 4 8 12 16 20 0 1.0 2.0 3.0 4.0 5.0 p d = 30w v gs = 10v t c = 25? pulse test 5v 6v 4v 3v power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 v gs = 10v t c = 25? pulse test 5v 4v 6v 3v 2.5v 2v 10 ? 5 7 10 0 2 3 5 7 10 1 2 3 2 3 5 7 210 0 357 2 10 1 357 2 10 2 357 5 2 tw = 10 m s t c = 25? single pulse 100 m s 10ms 1ms dc
feb.1999 mitsubishi nch power mosfet FS10VSJ-2 high-speed switching use 0 1.0 2.0 3.0 4.0 5.0 0246810 i d = 15a t c = 25 c pulse test 10a 5a 0 0.1 0.2 0.3 0.4 0.5 10 ? 210 0 357 2 10 1 357 23 10 2 57 v gs = 4v t c = 25 c pulse test 10v 0 4 8 12 16 20 0246810 tc = 25 c v ds = 10v pulse test 10 0 10 1 23 57 10 2 23 4457 10 0 10 1 2 3 5 7 10 2 2 3 5 4 4 7 t c = 25 c 75 c 125 c v ds = 5v pulse test 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 357 2 10 1 357 2 10 2 3 3 57 2 ciss coss crss tch = 25 c f = 1mh z v gs = 0v 10 0 10 1 23457 10 2 23457 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 t d(off) t d(on) t r tch = 25 c v dd = 50v v gs = 10v r gen = r gs = 50 w t f on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
feb.1999 mitsubishi nch power mosfet FS10VSJ-2 high-speed switching use gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?) 0 8 16 24 32 40 0 0.4 0.8 1.2 1.6 2.0 t c = 125? 75? 25? v gs = 0v pulse test 0 2 4 6 8 10 0 4 8 12 16 20 v ds = 20v 50v 80v tch = 25? i d = 10a source current i s (a) 10 ? 10 0 2 3 4 5 7 10 1 2 3 4 5 7 ?0 0 50 100 150 v gs = 10v i d = 1/2i d pulse test 0 0.8 1.6 2.4 3.2 4.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? p dm tw d = t tw t 0.5 0.2 d = 1.0 single pulse 0.1 0.05 0.02 0.01
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